MMJT350 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت MMJT350	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi SMMJT350T3G
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 500mA
Power Dissipation (Pd): 2.75W
Transition Frequency (fT): -
DC Current Gain (hFE@Ic,Vce): 30@50mA,10V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 300V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
Package: SOT-223
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 2.75W
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223 (TO-261)
Base Part Number: SMMJT3
detail: Bipolar (BJT) Transistor PNP 300V 500mA 2.75W Surface Mount SOT-223 (TO-261)